主要特點(diǎn)
• 頻率和電平切換時(shí)間僅為240 μs(典型)的矢量信號(hào)發(fā)生器,用于生產(chǎn)中提高生產(chǎn)率
• 高達(dá)6GHz、集成基帶發(fā)生器的小型獨(dú)立矢量信號(hào)發(fā)生器(高1.5HU、寬19英寸)
• 集成有高達(dá)240 MHzI/Q調(diào)制帶寬(射頻)的基帶發(fā)生器,支持先進(jìn)數(shù)字標(biāo)準(zhǔn),包括IEEE 802.11ac
• 杰出的EVM和ACLR射頻性能
• 易于使用R&S®WinIQSIM2™仿真軟件生成數(shù)字標(biāo)準(zhǔn)信號(hào),如LTE 和LTE-Advanced
• 在使用多于兩面接收天線(xiàn)的MIMO應(yīng)用中增強(qiáng)R&S®SMW200A
• 頻率和電平切換時(shí)間僅為240 μs(典型)的矢量信號(hào)發(fā)生器,用于生產(chǎn)中提高生產(chǎn)率
• 高達(dá)6GHz、集成基帶發(fā)生器的小型獨(dú)立矢量信號(hào)發(fā)生器(高1.5HU、寬19英寸)
• 集成有高達(dá)240 MHzI/Q調(diào)制帶寬(射頻)的基帶發(fā)生器,支持先進(jìn)數(shù)字標(biāo)準(zhǔn),包括IEEE 802.11ac
• 杰出的EVM和ACLR射頻性能
• 易于使用R&S®WinIQSIM2™仿真軟件生成數(shù)字標(biāo)準(zhǔn)信號(hào),如LTE 和LTE-Advanced
• 在使用多于兩面接收天線(xiàn)的MIMO應(yīng)用中增強(qiáng)R&S®SMW200A
Key Facts
- Fastest vector signal generator with frequency and level switchover times of 240 μs (typ.) for optimized throughput in production
- Smallest standalone vector signal generator up to 6 GHz with integrated baseband generator (1 HU ½ 19")
- Integrated baseband generator with I/Q modulation bandwidth of up to 240 MHz (in RF) supporting all advanced digital standards, including IEEE 802.11ac
- Excellent RF performance for EVM and ACLR
- Easy signal generation for digital standards such as LTE and LTE-Advanced using the R&S®WinIQSIM2™simulation software
- Ideal enhancement for the R&S®SMW200A in MIMO applications with more than two receiving antennas
Specifications
Frequency | ||
Frequency range | CW mode and I/Q mode | 1 MHz to 3 GHz |
with the R&S®SGT-KB106 option CW mode and I/Q mode |
1 MHz to 6 GHz |
|
Setting time | with PCIe/Ethernet remote control | < 500 μs |
Input frequency for external reference | into R&S®SGT100A | 10 MHz, 13 MHz, 100 MHz, 1000 MHz |
Level | ||
Specified level range | –120 dBm to +17 dBm (PEP)(peak envelope power) | |
Setting time | with PCIe/Ethernet remote control, setting characteristic: auto | < 500 μs |
Spectral purity | ||
Harmonics | level ≤ 8 dBm, CW, I/Q wideband off | < –30 dBc |
Nonharmonics | level > –10 dBm, offset > 10 kHz from carrier, f ≤ 1.5 GHz | < –76 dBc |
Wideband noise | 10 MHz carrier offset,level > 5 dBm, 1 Hz meas. bandwidth, CW | < –145 dBc |
SSB phase noise | 20 kHz carrier offset, 1 Hz measurement bandwidth | |
f = 1 GHz | < –126 dBc; –133 dBc (typ.) | |
f = 6 GHz | < –110 dBc; –117 dBc (typ.) | |
Pulse modulation | optional, with the R&S®SGT-K22 option | |
On/off ratio | > 80 dB | |
Minimum pulse width | using the integrated pulse generator | 20 ns |
I/Q modulation | ||
I/Q modulator bandwidth (RF) | using an external analog signal 100 MHz < f ≤ 2.5 GHz, I/Q wideband 2.5 GHz < f ≤ 6 GHz, I/Q wideband |
20 % of carrier frequency 1 GHz |
using the integrated baseband source with the R&S®SGT-K521 option with the R&S®SGT-K521 and R&S®SGT-K522 options, with the R&S®SGT-K521, R&S®SGT-K522 and R&S®SGT-K523 options |
60 MHz 120 MHz 160 MHz 240 MHz |
|
Waveform length | in one-sample steps | 1 sample to 32 Msample |
with the R&S®SGT-K511 option | 1 sample to 256 Msample | |
with the R&S®SGT-K511 and R&S®GT-K512 options | 1 sample to 1 Gsample | |
Waveform changeover time in multisegment waveform mode | 50 MHz clock rate (external trigger, without clock change) | 5 μs (meas.) |
Sample resolution | equivalent to D/A converter | 16 bit |
ACLR | WCDMA 3GPP FDD, TM 1-64 | > 68 dB; 71 dB (typ.) |
EVM | IEEE 802.11ac, 160 MHz, MCS 9 | 0.4 % (typ.) |
Supported standards with R&S®WinIQSIM2™TM | with additional options | EUTRA/LTE, LTE-Advanced, 3GPP FDD incl. HSPA/HSPA+, GSM/EDGE/EDGE Evolution, TD-SCDMA, CDMA2000®/1xEV-DO, TETRA, IEEE 802.11a/b/g/n/p/ac, IEEE 802.16, Bluetooth®, NFC, DVB-H/DVB-T, DAB/T-DMB, GPS, Galileo, Glonass, BeiDou |
Remote control | PCIe (single lane), Ethernet (TCP/IP) 10/100/1000BaseT, USB 2.0 | |
General data | ||
Power consumption | 65 W (meas.) | |
Dimensions | W × H × D, per unit | 250 mm × 52.5 mm × 401 mm (9.84 in × 2.07 in × 15.79 in) 1 HU, ½ 19“ rack width |
Weight | when fully equipped, per unit | 4.0 kg (8.82 lb) |
Recommended calibration interval | 40 h/week operation in the full range of the specified environmental conditions | 3 years |